GaPAsN-based light-emitting diode on silicon

•A light-emitting diode based on diluted nitrides on a silicon substrate has been created.•The main most important stages of the formation of a light-emitting diode on a silicon substrate are shown.•The LED shows excellent thermal stability of radiation in the range of 200–360 K.•The LED has a high breakdown voltage of ~40 V. This paper describes the design and the stages of development of a light-emitting diode (LED) based on dilute nitride semiconductors on a silicon substrate. Current-voltage characteristics and electroluminescence spectra were obtained for the LED structure. The LED demonstrates intensive electroluminescence at a wavelength of 645 nm up to the temperature of 360 K. Besides, the resulting LED structure has a good temperature stability of the emission wavelength and a high breakdown voltage of ~−40 V.