Observation of Frequency Up-Conversion Gain in SIS Junctions at W Band

We have developed a test setup to measure frequency up-conversion gain in superconductor–insulator–superconductor (SIS) junctions at W band (75–110 GHz). A conventional SIS mixer with Nb/AlO x /Nb tunnel junctions was used as a frequency up-converter. An up-converted signal is measured by a room-tem...

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Veröffentlicht in:Journal of low temperature physics 2020-09, Vol.200 (5-6), p.255-260
Hauptverfasser: Kozuki, Y., Uzawa, Y., Kojima, T., Shan, W., Sakai, T.
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Sprache:eng
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Zusammenfassung:We have developed a test setup to measure frequency up-conversion gain in superconductor–insulator–superconductor (SIS) junctions at W band (75–110 GHz). A conventional SIS mixer with Nb/AlO x /Nb tunnel junctions was used as a frequency up-converter. An up-converted signal is measured by a room-temperature down-converter system. We observed distinct intermediate frequency responses to signal inputs from a continuous microwave source. The measured single-sideband up-conversion gain in SIS junctions was clearly positive (> 0 dB) with input frequency less than 2 GHz, which was well-calibrated by using an input from the continuous-wave source.
ISSN:0022-2291
1573-7357
DOI:10.1007/s10909-020-02470-x