Design and analysis of CMOS RF receiver front-end of LNA for wireless applications

Design and analysis of CMOS RF receiver front-end of LNA for wireless applications

This article deals the design and analysis of CMOS RF receiver front-end with the optimization of single-stage and two-stage low noise amplifier (LNA) for wireless applications. The low noise, high gain and better linearity for 3–10 GHz ultra wideband (UWB) wireless applications realized in 45 nm CM...

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Veröffentlicht in:Microprocessors and microsystems 2020-06, Vol.75, p.102999, Article 102999
Hauptverfasser: Mudavath, Mahesh, Kishore, K Hari, Hussain, Azham, Boopathi, C.S.
Format: Artikel
Sprache:eng
Schlagworte:
Amplification
Circuits
CMOS
CMOS technology
Design analysis
High gain
Impedance matching
Linearity
Low noise
Low noise amplifier
Noise
Noise figure
Noise levels
Optimization
Power gain
Radio frequency
Receiver front-end
Ultra-wideband (UWB)
Ultrawideband
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Zusammenfassung:This article deals the design and analysis of CMOS RF receiver front-end with the optimization of single-stage and two-stage low noise amplifier (LNA) for wireless applications. The low noise, high gain and better linearity for 3–10 GHz ultra wideband (UWB) wireless applications realized in 45 nm CMOS technology. The novelty of a single-ended and cascaded CMOS LNA designs for multi-standard purposeful for reconfigurable applications. The proposed LNA espouse entire circuit simulations investigation of the results in the center frequency of 3.4GHz. The admirable power gain (S21) is 32.5 dB with high reverse isolation (S12) of
ISSN:0141-9331
1872-9436
DOI:10.1016/j.micpro.2020.102999