Optical characterizations of Cd1-XZnXTe mixed crystals grown by vertical Bridgman-Stockbarger method

•Cd1−xZnxTe grown by grown by vertical Bridgman-Stockbarger method.•Absorption and photoluminescence spectroscopy.•Temperature dependent optical spectroscopy of Cd1−xZnxTe mixed crystals. Cadmium zinc telluride is a tunable band gap II–VI compound semiconductor, which has received considerable atten...

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Veröffentlicht in:	Journal of crystal growth 2020-03, Vol.534, p.125491, Article 125491
Hauptverfasser:	Hsu, H.P., Lin, D.Y., Chen, C.W., Wu, Y.F., Strzałkowski, K., Sitarek, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Characterization A2. Single crystal growth Absorption B1. Cadmium compounds B2. Semiconducting II-VI materials Bridgman method Cadmium zinc tellurides Crystal growth Crystal structure Energy gap Mixed crystals Nuclear radiation Optical properties Photoluminescence Radiation detectors Raman spectra Spectrum analysis Temperature dependence Zinc telluride Zinc tellurides
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Beschreibung
Zusammenfassung:	•Cd1−xZnxTe grown by grown by vertical Bridgman-Stockbarger method.•Absorption and photoluminescence spectroscopy.•Temperature dependent optical spectroscopy of Cd1−xZnxTe mixed crystals. Cadmium zinc telluride is a tunable band gap II–VI compound semiconductor, which has received considerable attention due to its applications such as nuclear radiation detectors and industrial process monitoring. We have studied the optical properties of the ternary compound semiconductors Cd1−xZnxTe grown by vertical Bridgman-Stockbarger method in the whole range of zinc content 0
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2020.125491