Current‐Induced Spin–Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in‐plane current. SOT spearheads novel spintronic applications including high‐speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT‐based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field‐free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out‐of‐plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices. Spin–orbit torque (SOT) originating from the spin–orbit coupling has provided significant benefits for spintronic devices such as high‐speed magnetic memories and reconfigurable spin logics because it enables energy‐efficient magnetization switching using in‐plane charge current. Recent progress in SOT research, highlighting the advantages and challenges of SOT‐based spintronic devices is presented.