Capacitive Trench based Charge Transfer Device

Capacitive Trench based Charge Transfer Device

This paper presents a new charge coupled device (CCD) based on capacitive deep trench isolation (CDTI), developed in CMOS technology. The 2 phase device features collection, storage and transfer in the silicon volume. Full Well Charge (FWC) of about 2.6ke-/μm2 and Charge Transfer Inefficiency (CTI)...

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Veröffentlicht in:IEEE electron device letters 2020-09, Vol.41 (9), p.1-1
Hauptverfasser: Touron, Pierre, Roy, Francois, Magnan, Pierre, Marcelot, Olivier, Demiguel, Stephane, Virmontois, Cedric
Format: Artikel
Sprache:eng
Schlagworte:
Charge coupled device
Charge coupled devices
Charge transfer
Charge transfer devices
CMOS
deep trench capacitor
Electric potential
Electrostatics
Logic gates
Registers
Silicon
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Beschreibung
Zusammenfassung:This paper presents a new charge coupled device (CCD) based on capacitive deep trench isolation (CDTI), developed in CMOS technology. The 2 phase device features collection, storage and transfer in the silicon volume. Full Well Charge (FWC) of about 2.6ke-/μm2 and Charge Transfer Inefficiency (CTI) below 1×10-4 have been measured via electrical charge injection on pixels with pitches ranging from 12 to 48μm.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.3014431