Diluted nitride type-II superlattices: Overcoming the difficulties of bulk GaAsSbN in solar cells

We demonstrate type-II GaAsSb/GaAsN superlattices (SL) as a suitable structure to form the lattice-matched 1.0–1.15 eV subcell that would allow the implementation of the optimum monolithic multi-junction solar cell design. The separation of Sb and N atoms during growth leads to an improved composition homogeneity and a lower defect density than in the bulk GaAsSbN counterparts. The type-II band alignment SLs provide long radiative lifetimes that facilitate carrier collection as compared to equivalent type-I SLs. Moreover, the radiative lifetime can be controllably tuned through the period thickness, which is not possible in type-I SLs. A reduced period thickness results in enhanced absorption due to increased wavefunction overlap, as well as in a change in the transport regime from diffusive to quasiballistic, providing improved carrier extraction efficiency. As a result, the short period SL single-junction solar cells show an enhanced power conversion efficiency of 134% over the equivalent bulk devices. [Display omitted] •GaAsSb/GaAsN superlattices show lower defect density than equivalent bulk alloys.•Type-II band alignment provides long and tunable radiative carrier lifetimes.•Carrier absorption and extraction are enhanced in thin period type-II superlattices.•Thin period superlattice solar cell shows 134% higher efficiency than bulk devices.•GaAsSb/GaAsN superlattices are apt structures for ideal multi-junction solar cells.