Solution-processed, low voltage tantalum-based memristive switches

Solution-processed, low voltage tantalum-based memristive switches

•Solution-processed Ta/TaOx/Pt memristive switches.•TaOx films fabricated using anodic oxidation in a weak, naturally occurring acid.•Devices show promising memristive behavior between 3 and 5 V.•Memristive switches show an almost 80-times change in resistance. In this letter, preliminary results sh...

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Veröffentlicht in:Materials letters 2020-06, Vol.269, p.127676, Article 127676
Hauptverfasser: Sophocleous, Marios, Mohammadian, Navid, Majewski, Leszek A., Georgiou, Julius
Format: Artikel
Sprache:eng
Schlagworte:
Anodization
Anodizing
Citric acid
Glass substrates
Low voltage
Materials science
Memristive switches
Memristors
Oxidation
Oxide coatings
Platinum
Switches
Tantalum
Tantalum oxides
Tantalum-oxide
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Zusammenfassung:•Solution-processed Ta/TaOx/Pt memristive switches.•TaOx films fabricated using anodic oxidation in a weak, naturally occurring acid.•Devices show promising memristive behavior between 3 and 5 V.•Memristive switches show an almost 80-times change in resistance. In this letter, preliminary results showing the memristive behavior of tantalum/tantalum oxide/platinum devices on glass substrates are reported. The ultra-thin (d 
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2020.127676