Enhancement of thermoelectric figure of merit by using nonequilibrium state between electrons and phonons
We investigated the thermoelectric properties of a metal/semiconductor multilayer by using a simple parabolic band model and two-temperature model. The multilayer enables not only reducing thermal conductivity but also enhancing the power factor by using a nonequilibrium state between electrons and...
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Veröffentlicht in: | Applied physics letters 2020-08, Vol.117 (8) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We investigated the thermoelectric properties of a metal/semiconductor multilayer by using a simple parabolic band model and two-temperature model. The multilayer enables not only reducing thermal conductivity but also enhancing the power factor by using a nonequilibrium state between electrons and phonons created by the interface. Our results revealed that combining a metal with low lattice thermal conductivity and a semiconductor with high lattice thermal conductivity can compensate for their weak points each other in the thermoelectric properties, resulting in the remarkable enhancement of the figure of merit. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0003661 |