Enhancement of thermoelectric figure of merit by using nonequilibrium state between electrons and phonons

We investigated the thermoelectric properties of a metal/semiconductor multilayer by using a simple parabolic band model and two-temperature model. The multilayer enables not only reducing thermal conductivity but also enhancing the power factor by using a nonequilibrium state between electrons and...

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Veröffentlicht in:Applied physics letters 2020-08, Vol.117 (8)
Hauptverfasser: Yabuuchi, Shin, Kurosaki, Yosuke, Fukatani, Naoto, Hayakawa, Jun
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigated the thermoelectric properties of a metal/semiconductor multilayer by using a simple parabolic band model and two-temperature model. The multilayer enables not only reducing thermal conductivity but also enhancing the power factor by using a nonequilibrium state between electrons and phonons created by the interface. Our results revealed that combining a metal with low lattice thermal conductivity and a semiconductor with high lattice thermal conductivity can compensate for their weak points each other in the thermoelectric properties, resulting in the remarkable enhancement of the figure of merit.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0003661