Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures
The transparency coefficients of a semiconductor structure consisting of alternating asymmetric potential barriers and wells, where the Bastard condition is taken into account, are calculated. It is shown that in the structure, an oscillation of the transmission coefficient of electrons depending on...
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| Veröffentlicht in: | Russian physics journal 2020-08, Vol.63 (4), p.537-546 |
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| container_end_page | 546 |
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| container_title | Russian physics journal |
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| creator | Rasulov, R. Ya Rasulov, V. R. Mamadalieva, N. Z. Sultanov, R. R. |
| description | The transparency coefficients of a semiconductor structure consisting of alternating asymmetric potential barriers and wells, where the Bastard condition is taken into account, are calculated. It is shown that in the structure, an oscillation of the transmission coefficient of electrons depending on their energy is observed, which is caused by the interference of the de Broglie waves coming to the barrier and reflected from the potential barrier. The electronic states of a multilayer semiconductor structure consisting of alternating potential wells and barriers are analyzed. |
| doi_str_mv | 10.1007/s11182-020-02067-7 |
| format | Article |
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| subjects | Analysis Condensed Matter Physics Electron states Electron transfer Electron transport Hadrons Heavy Ions Lasers Mathematical and Computational Physics Multilayers Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Potential barriers Theoretical Wave propagation |
| title | Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures |
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