Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures

The transparency coefficients of a semiconductor structure consisting of alternating asymmetric potential barriers and wells, where the Bastard condition is taken into account, are calculated. It is shown that in the structure, an oscillation of the transmission coefficient of electrons depending on their energy is observed, which is caused by the interference of the de Broglie waves coming to the barrier and reflected from the potential barrier. The electronic states of a multilayer semiconductor structure consisting of alternating potential wells and barriers are analyzed.