Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers
An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar sem...
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| Veröffentlicht in: | Bulletin of the Russian Academy of Sciences. Physics 2020-07, Vol.84 (7), p.844-850 |
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| container_title | Bulletin of the Russian Academy of Sciences. Physics |
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| creator | Kalmanovich, V. V. Seregina, E. V. Stepovich, M. A. |
| description | An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques. |
| doi_str_mv | 10.3103/S1062873820070138 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2435809905</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2435809905</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2318-4bb2fe54e3137c2a4792a7199166cfba6b288faff54303d77eb493d0efb1f4e13</originalsourceid><addsrcrecordid>eNp1kM1KxEAQhIMouK4-gLcBz9H5y88cdVFX2KDgeg6dSY9mSWZ0ZoLsM_jSRlfwIJ666ar6GipJThk9F4yKi0dGc14WouSUFpSJci-ZMSVkqqTg-9M-yemXfpgchbChNMsUz2bJRwXxBQeInYaeVK7FvrPPxBmyRIgEbEsqCIGsPdhg0JOHF7RuQAtkAWPAljRbcmcjetCxc5Y0GN8RLbnuUUc_Ha4QhvANeujBgiePOHTa2XbU0XlSjX3setiiD8fJgYE-4MnPnCdPN9frxTJd3d_eLS5XqeaClalsGm4wkyiYKDQHWSgOBVOK5bk2DeQNL0sDxmRSUNEWBTZSiZaiaZiRyMQ8OdtxX717GzHEeuNGb6eXNZciK6lSNJtcbOfS3oXg0dSvvhvAb2tG66_O6z-dTxm-y4TJa5_R_5L_D30CoC6E1Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2435809905</pqid></control><display><type>article</type><title>Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers</title><source>SpringerLink Journals - AutoHoldings</source><creator>Kalmanovich, V. V. ; Seregina, E. V. ; Stepovich, M. A.</creator><creatorcontrib>Kalmanovich, V. V. ; Seregina, E. V. ; Stepovich, M. A.</creatorcontrib><description>An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.</description><identifier>ISSN: 1062-8738</identifier><identifier>EISSN: 1934-9432</identifier><identifier>DOI: 10.3103/S1062873820070138</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Electron beams ; Electron probes ; Hadrons ; Heat transfer ; Heavy Ions ; Mass transfer ; Mathematical analysis ; Mathematical models ; Matrix methods ; Minority carriers ; Multilayers ; Nuclear Physics ; Physics ; Physics and Astronomy</subject><ispartof>Bulletin of the Russian Academy of Sciences. Physics, 2020-07, Vol.84 (7), p.844-850</ispartof><rights>Allerton Press, Inc. 2020</rights><rights>Allerton Press, Inc. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2318-4bb2fe54e3137c2a4792a7199166cfba6b288faff54303d77eb493d0efb1f4e13</citedby><cites>FETCH-LOGICAL-c2318-4bb2fe54e3137c2a4792a7199166cfba6b288faff54303d77eb493d0efb1f4e13</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.3103/S1062873820070138$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.3103/S1062873820070138$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Kalmanovich, V. V.</creatorcontrib><creatorcontrib>Seregina, E. V.</creatorcontrib><creatorcontrib>Stepovich, M. A.</creatorcontrib><title>Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers</title><title>Bulletin of the Russian Academy of Sciences. Physics</title><addtitle>Bull. Russ. Acad. Sci. Phys</addtitle><description>An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.</description><subject>Electron beams</subject><subject>Electron probes</subject><subject>Hadrons</subject><subject>Heat transfer</subject><subject>Heavy Ions</subject><subject>Mass transfer</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Matrix methods</subject><subject>Minority carriers</subject><subject>Multilayers</subject><subject>Nuclear Physics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>1062-8738</issn><issn>1934-9432</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kM1KxEAQhIMouK4-gLcBz9H5y88cdVFX2KDgeg6dSY9mSWZ0ZoLsM_jSRlfwIJ666ar6GipJThk9F4yKi0dGc14WouSUFpSJci-ZMSVkqqTg-9M-yemXfpgchbChNMsUz2bJRwXxBQeInYaeVK7FvrPPxBmyRIgEbEsqCIGsPdhg0JOHF7RuQAtkAWPAljRbcmcjetCxc5Y0GN8RLbnuUUc_Ha4QhvANeujBgiePOHTa2XbU0XlSjX3setiiD8fJgYE-4MnPnCdPN9frxTJd3d_eLS5XqeaClalsGm4wkyiYKDQHWSgOBVOK5bk2DeQNL0sDxmRSUNEWBTZSiZaiaZiRyMQ8OdtxX717GzHEeuNGb6eXNZciK6lSNJtcbOfS3oXg0dSvvhvAb2tG66_O6z-dTxm-y4TJa5_R_5L_D30CoC6E1Q</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Kalmanovich, V. V.</creator><creator>Seregina, E. V.</creator><creator>Stepovich, M. A.</creator><general>Pleiades Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200701</creationdate><title>Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers</title><author>Kalmanovich, V. V. ; Seregina, E. V. ; Stepovich, M. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2318-4bb2fe54e3137c2a4792a7199166cfba6b288faff54303d77eb493d0efb1f4e13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Electron beams</topic><topic>Electron probes</topic><topic>Hadrons</topic><topic>Heat transfer</topic><topic>Heavy Ions</topic><topic>Mass transfer</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Matrix methods</topic><topic>Minority carriers</topic><topic>Multilayers</topic><topic>Nuclear Physics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kalmanovich, V. V.</creatorcontrib><creatorcontrib>Seregina, E. V.</creatorcontrib><creatorcontrib>Stepovich, M. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Bulletin of the Russian Academy of Sciences. Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kalmanovich, V. V.</au><au>Seregina, E. V.</au><au>Stepovich, M. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers</atitle><jtitle>Bulletin of the Russian Academy of Sciences. Physics</jtitle><stitle>Bull. Russ. Acad. Sci. Phys</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>84</volume><issue>7</issue><spage>844</spage><epage>850</epage><pages>844-850</pages><issn>1062-8738</issn><eissn>1934-9432</eissn><abstract>An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.3103/S1062873820070138</doi><tpages>7</tpages></addata></record> |
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| ispartof | Bulletin of the Russian Academy of Sciences. Physics, 2020-07, Vol.84 (7), p.844-850 |
| issn | 1062-8738 1934-9432 |
| language | eng |
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| subjects | Electron beams Electron probes Hadrons Heat transfer Heavy Ions Mass transfer Mathematical analysis Mathematical models Matrix methods Minority carriers Multilayers Nuclear Physics Physics Physics and Astronomy |
| title | Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T01%3A56%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mathematical%20Modeling%20of%20Heat%20and%20Mass%20Transfer%20Phenomena%20Caused%20by%20Interaction%20between%20Electron%20Beams%20and%20Planar%20Semiconductor%20Multilayers&rft.jtitle=Bulletin%20of%20the%20Russian%20Academy%20of%20Sciences.%20Physics&rft.au=Kalmanovich,%20V.%20V.&rft.date=2020-07-01&rft.volume=84&rft.issue=7&rft.spage=844&rft.epage=850&rft.pages=844-850&rft.issn=1062-8738&rft.eissn=1934-9432&rft_id=info:doi/10.3103/S1062873820070138&rft_dat=%3Cproquest_cross%3E2435809905%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2435809905&rft_id=info:pmid/&rfr_iscdi=true |