Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers

An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.