The effect of annealing on magnetic properties of “Thick” microwires

In this paper we provide results on effect of post-processing on magnetic properties (giant magnetoimpedance, GMI, effect and domain wall dynamics) of Fe71.7B13.4Si11Nb3Ni0.9 glass-coated microwire with metallic nucleus diameter d = 103 μm and total diameter D = 158 μm prepared by Taylor-Ulitovsky m...

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Veröffentlicht in:Journal of alloys and compounds 2020-08, Vol.831, p.150992, Article 150992
Hauptverfasser: Corte-León, P., Zhukova, V., Ipatov, M., Blanco, J.M., González, J., Churyukanova, M., Taskaev, S., Zhukov, А.
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Sprache:eng
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Zusammenfassung:In this paper we provide results on effect of post-processing on magnetic properties (giant magnetoimpedance, GMI, effect and domain wall dynamics) of Fe71.7B13.4Si11Nb3Ni0.9 glass-coated microwire with metallic nucleus diameter d = 103 μm and total diameter D = 158 μm prepared by Taylor-Ulitovsky method. Amorphous structure of as-prepared wires is confirmed by X-ray diffraction and electronic microscopy. As-prepared glass-coated wires present relatively low GMI ratio (about 50% at 500 MHz) and relatively low coercivity (about 25 A/m). Additionally, as-prepared sample present rectangular hysteresis loop and fast single domain wall propagation with domain wall mobility of about 11,9 m2/As. After annealing (either under tensile stress or without stress) we observed considerable improvement of the GMI ratio (from 50% up to 220% at 200 MHz) and domain wall mobility up to 15,5 m2/As. Observed GMI effect and domain wall mobility improvement has been attributed to the stresses relaxation and creep anisotropy. We demonstrated that the Taylor-Ulitovsky technique is suitable for preparation of “thick” Fe based amorphous microwires with good magnetic properties and GMI effect suitable for industrial applications. [Display omitted] •Preparation of thick glass-coated amorphous microwires.•Improvement of GMI effect of microwires by -annealing.•Fast single domain wall propagation with domain wall mobility of about 11,9 m2/As.•Enhancement of domain wall propagation by annealing.•Change of Hysteresis loop of microwires from rectangular to linear after stress annealing.•Enhanced GMI ratio of thick microwires in a wide frequency range.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2019.06.094