Peculiarities of electron transport in SiOx films obtained by ion-plasma sputtering

The electrical conductivity of SiO x and nanocomposite SiO 2 (Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanisms of the electrical conductivity of the SiO x and SiO 2 (Si) films have been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level (Mott’s mechanism). The minimum of current in current–voltage characteristics has been revealed in the temperature range 78–225 K. The qualitative model for explanation of the features of electron transport in SiO x and SiO 2 (Si) films has been proposed.