Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method
•Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction. We report the growth o...
Gespeichert in:
| Veröffentlicht in: | Journal of crystal growth 2020-08, Vol.543, p.125700, Article 125700 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | 125700 |
| container_title | Journal of crystal growth |
| container_volume | 543 |
| creator | Straker, Michael Chauhan, Ankur Sinha, Mekhola Phelan, W. Adam Chandrashekhar, M.V.S. Hemker, Kevin J. Marvel, Christopher Spencer, Michael |
| description | •Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction.
We report the growth of 4 mm diameter × 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5–20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([0 0 1]h) oriented in the (1 2 1 0)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates |
| doi_str_mv | 10.1016/j.jcrysgro.2020.125700 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2432559443</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024820302232</els_id><sourcerecordid>2432559443</sourcerecordid><originalsourceid>FETCH-LOGICAL-c388t-c788b267be8e7c55914635b0c7f2a0467b24761a4a52a720ad686bd055bbdf693</originalsourceid><addsrcrecordid>eNqFUMtKAzEUDaJgrf6CBFxPzWTy6k6ttgoFN7pxE_KaToY6qclUGb_elNG1m3vh3vPgHAAuSzQrUcmu21lr4pA2McwwwvmIKUfoCExKwauCIoSPwSRPXCBMxCk4S6lFKDNLNAF2FcNX38BQw8ZvGrjbR98P8Dt0roiu9p2z8C7E0MGFitpbB5PvNlsHD5a92iaoB7hWyUV470N-L7dB9RkC37IEfHd9E-w5OKkz1F387il4XT68LB6L9fPqaXG7LkwlRF8YLoTGjGsnHDeUzkvCKqqR4TVWiOQHJpyViiiKFcdIWSaYtohSrW3N5tUUXI26uxg-9i71sg372GVLiUmFsyIhVUaxEWViSCmHlLvo31UcZInkoVHZyr9G5aFROTaaiTcj0eUMn95FmYx3nXHWR2d6aYP_T-IHEHeCmA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2432559443</pqid></control><display><type>article</type><title>Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method</title><source>Elsevier ScienceDirect Journals</source><creator>Straker, Michael ; Chauhan, Ankur ; Sinha, Mekhola ; Phelan, W. Adam ; Chandrashekhar, M.V.S. ; Hemker, Kevin J. ; Marvel, Christopher ; Spencer, Michael</creator><creatorcontrib>Straker, Michael ; Chauhan, Ankur ; Sinha, Mekhola ; Phelan, W. Adam ; Chandrashekhar, M.V.S. ; Hemker, Kevin J. ; Marvel, Christopher ; Spencer, Michael</creatorcontrib><description>•Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction.
We report the growth of 4 mm diameter × 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5–20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([0 0 1]h) oriented in the (1 2 1 0)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates <10 mm/hr the crystal orientation was not reproducible, suggesting a critical rate for twin-plane mediated growth to dominate. Zone refinement of these crystals led to a significant reduction of trace impurities to better than 99.999 wt% purity, at the expense of increased twinning. Powder x-ray diffraction confirms that the bulk is rhombohedral B4C, consistent with the microstructural analysis. The X-ray reciprocal space maps reveal the growth direction to be close to the [0 0 1]h direction, and the corresponding ω-rocking curve width is ~530 arcsec. The rocking curve consisted of 3 distinct peaks, indicating in-plane mosaicism, consistent with the twinning observed. Berkovich nano-indentation of the key (0 0 1)h plane showed 41 ± 1 GPa hardness, with a Young’s modulus of 520 ± 14 GPa, comparable to literature reports.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2020.125700</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Characterization ; A1. Defects ; A1. X-ray diffraction ; A2. Growth from melt ; A2. Single crystal growth ; Boron carbide ; Crystal structure ; Crystals ; Microstructural analysis ; Modulus of elasticity ; Nanoindentation ; Purity ; Semiconductor lasers ; Single crystals ; Trace impurities ; Twinning ; X ray powder diffraction</subject><ispartof>Journal of crystal growth, 2020-08, Vol.543, p.125700, Article 125700</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Aug 1, 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-c788b267be8e7c55914635b0c7f2a0467b24761a4a52a720ad686bd055bbdf693</citedby><cites>FETCH-LOGICAL-c388t-c788b267be8e7c55914635b0c7f2a0467b24761a4a52a720ad686bd055bbdf693</cites><orcidid>0000-0002-6798-5882</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024820302232$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Straker, Michael</creatorcontrib><creatorcontrib>Chauhan, Ankur</creatorcontrib><creatorcontrib>Sinha, Mekhola</creatorcontrib><creatorcontrib>Phelan, W. Adam</creatorcontrib><creatorcontrib>Chandrashekhar, M.V.S.</creatorcontrib><creatorcontrib>Hemker, Kevin J.</creatorcontrib><creatorcontrib>Marvel, Christopher</creatorcontrib><creatorcontrib>Spencer, Michael</creatorcontrib><title>Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method</title><title>Journal of crystal growth</title><description>•Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction.
We report the growth of 4 mm diameter × 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5–20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([0 0 1]h) oriented in the (1 2 1 0)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates <10 mm/hr the crystal orientation was not reproducible, suggesting a critical rate for twin-plane mediated growth to dominate. Zone refinement of these crystals led to a significant reduction of trace impurities to better than 99.999 wt% purity, at the expense of increased twinning. Powder x-ray diffraction confirms that the bulk is rhombohedral B4C, consistent with the microstructural analysis. The X-ray reciprocal space maps reveal the growth direction to be close to the [0 0 1]h direction, and the corresponding ω-rocking curve width is ~530 arcsec. The rocking curve consisted of 3 distinct peaks, indicating in-plane mosaicism, consistent with the twinning observed. Berkovich nano-indentation of the key (0 0 1)h plane showed 41 ± 1 GPa hardness, with a Young’s modulus of 520 ± 14 GPa, comparable to literature reports.</description><subject>A1. Characterization</subject><subject>A1. Defects</subject><subject>A1. X-ray diffraction</subject><subject>A2. Growth from melt</subject><subject>A2. Single crystal growth</subject><subject>Boron carbide</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Microstructural analysis</subject><subject>Modulus of elasticity</subject><subject>Nanoindentation</subject><subject>Purity</subject><subject>Semiconductor lasers</subject><subject>Single crystals</subject><subject>Trace impurities</subject><subject>Twinning</subject><subject>X ray powder diffraction</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFUMtKAzEUDaJgrf6CBFxPzWTy6k6ttgoFN7pxE_KaToY6qclUGb_elNG1m3vh3vPgHAAuSzQrUcmu21lr4pA2McwwwvmIKUfoCExKwauCIoSPwSRPXCBMxCk4S6lFKDNLNAF2FcNX38BQw8ZvGrjbR98P8Dt0roiu9p2z8C7E0MGFitpbB5PvNlsHD5a92iaoB7hWyUV470N-L7dB9RkC37IEfHd9E-w5OKkz1F387il4XT68LB6L9fPqaXG7LkwlRF8YLoTGjGsnHDeUzkvCKqqR4TVWiOQHJpyViiiKFcdIWSaYtohSrW3N5tUUXI26uxg-9i71sg372GVLiUmFsyIhVUaxEWViSCmHlLvo31UcZInkoVHZyr9G5aFROTaaiTcj0eUMn95FmYx3nXHWR2d6aYP_T-IHEHeCmA</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>Straker, Michael</creator><creator>Chauhan, Ankur</creator><creator>Sinha, Mekhola</creator><creator>Phelan, W. Adam</creator><creator>Chandrashekhar, M.V.S.</creator><creator>Hemker, Kevin J.</creator><creator>Marvel, Christopher</creator><creator>Spencer, Michael</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-6798-5882</orcidid></search><sort><creationdate>20200801</creationdate><title>Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method</title><author>Straker, Michael ; Chauhan, Ankur ; Sinha, Mekhola ; Phelan, W. Adam ; Chandrashekhar, M.V.S. ; Hemker, Kevin J. ; Marvel, Christopher ; Spencer, Michael</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-c788b267be8e7c55914635b0c7f2a0467b24761a4a52a720ad686bd055bbdf693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>A1. Characterization</topic><topic>A1. Defects</topic><topic>A1. X-ray diffraction</topic><topic>A2. Growth from melt</topic><topic>A2. Single crystal growth</topic><topic>Boron carbide</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Microstructural analysis</topic><topic>Modulus of elasticity</topic><topic>Nanoindentation</topic><topic>Purity</topic><topic>Semiconductor lasers</topic><topic>Single crystals</topic><topic>Trace impurities</topic><topic>Twinning</topic><topic>X ray powder diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Straker, Michael</creatorcontrib><creatorcontrib>Chauhan, Ankur</creatorcontrib><creatorcontrib>Sinha, Mekhola</creatorcontrib><creatorcontrib>Phelan, W. Adam</creatorcontrib><creatorcontrib>Chandrashekhar, M.V.S.</creatorcontrib><creatorcontrib>Hemker, Kevin J.</creatorcontrib><creatorcontrib>Marvel, Christopher</creatorcontrib><creatorcontrib>Spencer, Michael</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Straker, Michael</au><au>Chauhan, Ankur</au><au>Sinha, Mekhola</au><au>Phelan, W. Adam</au><au>Chandrashekhar, M.V.S.</au><au>Hemker, Kevin J.</au><au>Marvel, Christopher</au><au>Spencer, Michael</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method</atitle><jtitle>Journal of crystal growth</jtitle><date>2020-08-01</date><risdate>2020</risdate><volume>543</volume><spage>125700</spage><pages>125700-</pages><artnum>125700</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction.
We report the growth of 4 mm diameter × 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5–20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([0 0 1]h) oriented in the (1 2 1 0)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates <10 mm/hr the crystal orientation was not reproducible, suggesting a critical rate for twin-plane mediated growth to dominate. Zone refinement of these crystals led to a significant reduction of trace impurities to better than 99.999 wt% purity, at the expense of increased twinning. Powder x-ray diffraction confirms that the bulk is rhombohedral B4C, consistent with the microstructural analysis. The X-ray reciprocal space maps reveal the growth direction to be close to the [0 0 1]h direction, and the corresponding ω-rocking curve width is ~530 arcsec. The rocking curve consisted of 3 distinct peaks, indicating in-plane mosaicism, consistent with the twinning observed. Berkovich nano-indentation of the key (0 0 1)h plane showed 41 ± 1 GPa hardness, with a Young’s modulus of 520 ± 14 GPa, comparable to literature reports.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2020.125700</doi><orcidid>https://orcid.org/0000-0002-6798-5882</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0022-0248 |
| ispartof | Journal of crystal growth, 2020-08, Vol.543, p.125700, Article 125700 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_journals_2432559443 |
| source | Elsevier ScienceDirect Journals |
| subjects | A1. Characterization A1. Defects A1. X-ray diffraction A2. Growth from melt A2. Single crystal growth Boron carbide Crystal structure Crystals Microstructural analysis Modulus of elasticity Nanoindentation Purity Semiconductor lasers Single crystals Trace impurities Twinning X ray powder diffraction |
| title | Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T18%3A26%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20high%20purity%20zone-refined%20Boron%20Carbide%20single%20crystals%20by%20Laser%20Diode%20Floating%20Zone%20method&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Straker,%20Michael&rft.date=2020-08-01&rft.volume=543&rft.spage=125700&rft.pages=125700-&rft.artnum=125700&rft.issn=0022-0248&rft.eissn=1873-5002&rft_id=info:doi/10.1016/j.jcrysgro.2020.125700&rft_dat=%3Cproquest_cross%3E2432559443%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2432559443&rft_id=info:pmid/&rft_els_id=S0022024820302232&rfr_iscdi=true |