Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method
•Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction. We report the growth o...
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Veröffentlicht in: | Journal of crystal growth 2020-08, Vol.543, p.125700, Article 125700 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •Laser Diode Floating Zone Furnace was used to grow single crystals of Boron Carbide.•Crystals were made purer via the zone refinement technique.•The major defects of the microstructure are stacking faults and twins.•The preferred growth direction is the basal plane direction.
We report the growth of 4 mm diameter × 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5–20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([0 0 1]h) oriented in the (1 2 1 0)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2020.125700 |