Deposition of Cu-films by a planar magnetron sputtering system at ultra-low operating pressure

The effect of operating pressure in the ultra-low range (down to 7 × 10−2 Pa) on film deposition by planar magnetron sputtering using a copper target has been studied. The magnetron discharge power was 500 W (target diameter 125 mm) in DC mode. The distance from the target to the deposition substrate was varied from 25 to 55 cm. The axial distribution of plasma ion current density and ion mass-to-charge ratio were measured under the same conditions by a moveable Langmuir probe and a modified quadrupole mass spectrometer, respectively. The influence of working gas pressure on film parameters such as deposition rate and roughness was investigated. •The effect of operating pressure in the ultra-low range (down to 7 × 10−2 Pa) on film deposition by planar magnetron sputtering using a copper target has been studied.•The axial distribution of plasma ion current density and ion mass-to-charge ratio were measured.•The influence of working gas pressure on film parameters such as deposition rate and roughness was investigated.