Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the...

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Veröffentlicht in:Applied physics letters 2020-08, Vol.117 (5)
Hauptverfasser: Yang, Chen, Fu, Houqiang, Su, Po-Yi, Liu, Hanxiao, Fu, Kai, Huang, Xuanqi, Yang, Tsung-Han, Chen, Hong, Zhou, Jingan, Deng, Xuguang, Montes, Jossue, Qi, Xin, Ponce, Fernando A., Zhao, Yuji
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Cathodoluminescence
Electrical properties
Electroluminescence
Gallium nitrides
High temperature
Hydrogen plasma
Hydrogen storage
MIS (semiconductors)
Semiconductor junctions
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Zusammenfassung:We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0018473