Implantation of Silicon Ions into Sapphire: Low Doses
After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire. X-ray measurements with the mapping of reciprocal space show the presence of a compressive stress with a –0.12% strain...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-08, Vol.54 (8), p.912-915 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Belova, N. E. Shemardov, S. G. Fanchenko, S. S. Golovkova, E. A. Kondratev, O. A. |
| description | After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire. X-ray measurements with the mapping of reciprocal space show the presence of a compressive stress with a –0.12% strain in the normal direction, and a tensile stress with a 0.2% strain in the
R
plane in this region. This reduces the lattice mismatch between sapphire and Si(100) and, thus, can improve the crystal quality of epitaxial Si films grown on such modified sapphire substrates. |
| doi_str_mv | 10.1134/S1063782620080060 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2430688105</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A631724853</galeid><sourcerecordid>A631724853</sourcerecordid><originalsourceid>FETCH-LOGICAL-c307t-57135b30a6db464ee31de6c953f70b95c3eafae6669707945aa4c7af6a1e2a693</originalsourceid><addsrcrecordid>eNp1kEtLw0AQxxdRsFY_gLeA59TZ7CvxVuqrUPBQPS_TdLduSbNxN0X89m6I4EFkDjPM_H_zIuSawoxSxm_XFCRTZSELgBJAwgmZUKggl1xVp0MsWT7Uz8lFjHsASkvBJ0QsD12DbY-9823mbbZ2jatTuPRtzFzb-2yNXffugrnLVv4zu_fRxEtyZrGJ5urHT8nb48Pr4jlfvTwtF_NVXjNQfS4UZWLDAOV2wyU3htGtkXUlmFWwqUTNDFo0UspKgaq4QOS1QiuRmgJlxabkZuzbBf9xNLHXe38MbRqpC85AliUFkVSzUbXDxmjXWt8HrJNtzWG4xViX8nPJqCp4KVgC6AjUwccYjNVdcAcMX5qCHt6p_7wzMcXIxKRtdyb8rvI_9A0hpnRU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2430688105</pqid></control><display><type>article</type><title>Implantation of Silicon Ions into Sapphire: Low Doses</title><source>SpringerNature Journals</source><creator>Belova, N. E. ; Shemardov, S. G. ; Fanchenko, S. S. ; Golovkova, E. A. ; Kondratev, O. A.</creator><creatorcontrib>Belova, N. E. ; Shemardov, S. G. ; Fanchenko, S. S. ; Golovkova, E. A. ; Kondratev, O. A.</creatorcontrib><description>After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire. X-ray measurements with the mapping of reciprocal space show the presence of a compressive stress with a –0.12% strain in the normal direction, and a tensile stress with a 0.2% strain in the
R
plane in this region. This reduces the lattice mismatch between sapphire and Si(100) and, thus, can improve the crystal quality of epitaxial Si films grown on such modified sapphire substrates.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620080060</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Aluminosilicates ; Aluminum silicates ; Annealing ; Compressive properties ; Epitaxial growth ; Epitaxy ; Fabrication ; High temperature ; Ion implantation ; Magnetic Materials ; Magnetism ; Mapping ; Physics ; Physics and Astronomy ; Precipitates ; Sapphire ; Silicon ; Silicon films ; Strain ; Substrates ; Tensile stress ; Testing of Materials and Structures ; Treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.912-915</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c307t-57135b30a6db464ee31de6c953f70b95c3eafae6669707945aa4c7af6a1e2a693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620080060$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620080060$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Belova, N. E.</creatorcontrib><creatorcontrib>Shemardov, S. G.</creatorcontrib><creatorcontrib>Fanchenko, S. S.</creatorcontrib><creatorcontrib>Golovkova, E. A.</creatorcontrib><creatorcontrib>Kondratev, O. A.</creatorcontrib><title>Implantation of Silicon Ions into Sapphire: Low Doses</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire. X-ray measurements with the mapping of reciprocal space show the presence of a compressive stress with a –0.12% strain in the normal direction, and a tensile stress with a 0.2% strain in the
R
plane in this region. This reduces the lattice mismatch between sapphire and Si(100) and, thus, can improve the crystal quality of epitaxial Si films grown on such modified sapphire substrates.</description><subject>Aluminosilicates</subject><subject>Aluminum silicates</subject><subject>Annealing</subject><subject>Compressive properties</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Fabrication</subject><subject>High temperature</subject><subject>Ion implantation</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Mapping</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Precipitates</subject><subject>Sapphire</subject><subject>Silicon</subject><subject>Silicon films</subject><subject>Strain</subject><subject>Substrates</subject><subject>Tensile stress</subject><subject>Testing of Materials and Structures</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLw0AQxxdRsFY_gLeA59TZ7CvxVuqrUPBQPS_TdLduSbNxN0X89m6I4EFkDjPM_H_zIuSawoxSxm_XFCRTZSELgBJAwgmZUKggl1xVp0MsWT7Uz8lFjHsASkvBJ0QsD12DbY-9823mbbZ2jatTuPRtzFzb-2yNXffugrnLVv4zu_fRxEtyZrGJ5urHT8nb48Pr4jlfvTwtF_NVXjNQfS4UZWLDAOV2wyU3htGtkXUlmFWwqUTNDFo0UspKgaq4QOS1QiuRmgJlxabkZuzbBf9xNLHXe38MbRqpC85AliUFkVSzUbXDxmjXWt8HrJNtzWG4xViX8nPJqCp4KVgC6AjUwccYjNVdcAcMX5qCHt6p_7wzMcXIxKRtdyb8rvI_9A0hpnRU</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>Belova, N. E.</creator><creator>Shemardov, S. G.</creator><creator>Fanchenko, S. S.</creator><creator>Golovkova, E. A.</creator><creator>Kondratev, O. A.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200801</creationdate><title>Implantation of Silicon Ions into Sapphire: Low Doses</title><author>Belova, N. E. ; Shemardov, S. G. ; Fanchenko, S. S. ; Golovkova, E. A. ; Kondratev, O. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-57135b30a6db464ee31de6c953f70b95c3eafae6669707945aa4c7af6a1e2a693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminosilicates</topic><topic>Aluminum silicates</topic><topic>Annealing</topic><topic>Compressive properties</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Fabrication</topic><topic>High temperature</topic><topic>Ion implantation</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Mapping</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Precipitates</topic><topic>Sapphire</topic><topic>Silicon</topic><topic>Silicon films</topic><topic>Strain</topic><topic>Substrates</topic><topic>Tensile stress</topic><topic>Testing of Materials and Structures</topic><topic>Treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Belova, N. E.</creatorcontrib><creatorcontrib>Shemardov, S. G.</creatorcontrib><creatorcontrib>Fanchenko, S. S.</creatorcontrib><creatorcontrib>Golovkova, E. A.</creatorcontrib><creatorcontrib>Kondratev, O. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Belova, N. E.</au><au>Shemardov, S. G.</au><au>Fanchenko, S. S.</au><au>Golovkova, E. A.</au><au>Kondratev, O. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Implantation of Silicon Ions into Sapphire: Low Doses</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-08-01</date><risdate>2020</risdate><volume>54</volume><issue>8</issue><spage>912</spage><epage>915</epage><pages>912-915</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>After the ion implantation of silicon into sapphire followed by high-temperature annealing, silicon and aluminosilicate precipitates are observed in the surface region of sapphire. X-ray measurements with the mapping of reciprocal space show the presence of a compressive stress with a –0.12% strain in the normal direction, and a tensile stress with a 0.2% strain in the
R
plane in this region. This reduces the lattice mismatch between sapphire and Si(100) and, thus, can improve the crystal quality of epitaxial Si films grown on such modified sapphire substrates.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620080060</doi><tpages>4</tpages></addata></record> |
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| ispartof | Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.912-915 |
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| subjects | Aluminosilicates Aluminum silicates Annealing Compressive properties Epitaxial growth Epitaxy Fabrication High temperature Ion implantation Magnetic Materials Magnetism Mapping Physics Physics and Astronomy Precipitates Sapphire Silicon Silicon films Strain Substrates Tensile stress Testing of Materials and Structures Treatment |
| title | Implantation of Silicon Ions into Sapphire: Low Doses |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T00%3A37%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Implantation%20of%20Silicon%20Ions%20into%20Sapphire:%20Low%20Doses&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Belova,%20N.%20E.&rft.date=2020-08-01&rft.volume=54&rft.issue=8&rft.spage=912&rft.epage=915&rft.pages=912-915&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782620080060&rft_dat=%3Cgale_proqu%3EA631724853%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2430688105&rft_id=info:pmid/&rft_galeid=A631724853&rfr_iscdi=true |