Resistivity Measurement of P+-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry

The resistivities of P+-implanted 4H-SiC samples, each prepared at different implantation and annealing temperatures, were measured using terahertz time-domain spectroscopic ellipsometry and compared with the results of the previously reported Raman spectra. The 4H-SiC samples of one group were implanted with P+ at 30 °C, 150 °C, 300 °C, and 500 °C, respectively, and annealed at 1600 °C. The resistivity was found to be approximately 8 mΩ·cm for the samples implanted at 30 and 150 °C and approximately 2 mΩ·cm for the remaining two samples. The 4H-SiC samples of the other group were implanted at 500 °C followed by annealing at 1200 °C, 1400 °C, 1600 °C, and 1800 °C, respectively. The resistivity was measured as 10 mΩ·cm for the sample annealed at 1200 °C and 3.0−1.8 mΩ·cm for the remaining three samples. These resistivity values are correlated with the Raman peak widths that reflect the lattice disorder.