Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs

In this paper, we present a new family of 3300 V silicon carbide (SiC) Schottky barrier diodes (SBDs) and power MOSFETs. The main design requirements are discussed with an emphasis on the design rules to improve the long-term reliability. Basic static and dynamic performance demonstrates low conduct...

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Veröffentlicht in:	Materials science forum 2020-07, Vol.1004, p.822-829
Hauptverfasser:	Kashyap, Avinash S., Sdrulla, Dumitru, Hong, Changsoo, Odekirk, Bruce, May, John, Gendron-Hansen, Amaury, Jiang, Yi Fan
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Commercialization Emission analysis Emission microscopy High temperature MOSFETs Quality assessment Reliability analysis Ruggedness Schottky diodes Silicon carbide
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