Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence

Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy...

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Veröffentlicht in:	Materials science forum 2020-07, Vol.1004, p.451-457
Hauptverfasser:	Nakamura, Takuyo, Ikegami, Masaaki, Kobayashi, Kazuo, Konishi, Kazuya, Ebihara, Kohei, Nakanishi, Yosuke, Noguchi, Tomoaki
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Electric fields Electrons Leakage current Microscopes Microscopy Photoluminescence Photons Schottky diodes Silicon carbide Threading dislocations Transmission electron microscopy
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