Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence
Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy...
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Veröffentlicht in: | Materials science forum 2020-07, Vol.1004, p.451-457 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy (AFM) revealed that pit-like structures were certainly formed but the depths were considerably shallow, indicating that influence of local electric field due to the structures was negligible on our SiC-JBSs. It became clear that tilt angles of the TDs inducing leakage were relatively larger than about 11° by 2PPL and that the TD was the threading mixed dislocation by TEM. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.1004.451 |