Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence

Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy...

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Veröffentlicht in:Materials science forum 2020-07, Vol.1004, p.451-457
Hauptverfasser: Nakamura, Takuyo, Ikegami, Masaaki, Kobayashi, Kazuo, Konishi, Kazuya, Ebihara, Kohei, Nakanishi, Yosuke, Noguchi, Tomoaki
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Sprache:eng
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Zusammenfassung:Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy (AFM) revealed that pit-like structures were certainly formed but the depths were considerably shallow, indicating that influence of local electric field due to the structures was negligible on our SiC-JBSs. It became clear that tilt angles of the TDs inducing leakage were relatively larger than about 11° by 2PPL and that the TD was the threading mixed dislocation by TEM.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.1004.451