Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic p...

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Veröffentlicht in:Materials science forum 2020-07, Vol.1004, p.113-119
Hauptverfasser: Schöler, Michael, Schuh, Philipp, Kollmuss, Manuel, Zielinski, Marcin, Steiner, Johannes, Wellmann, Peter J., La Via, Francesco, Mauceri, Marco
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Sprache:eng
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Zusammenfassung:Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Sirich gas phase was realized by the application of a Tantalum getter that was integrated into the graphitebased growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seed already containing the required 3C polytype.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.1004.113