Oxygen Radical Control via Atmospheric Pressure Plasma Treatment for Highly Stable IGZO Thin-Film Transistors
In this article, the atmospheric pressure plasma (APP) treatment method is proposed to solve the instability problem under a long-term electrical bias stress through the semiconductor surface treatment without degrading the excellent electrical characteristics of oxide thin-film transistors (TFTs)....
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 2020-08, Vol.67 (8), p.3135-3140 |
---|---|
Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | In this article, the atmospheric pressure plasma (APP) treatment method is proposed to solve the instability problem under a long-term electrical bias stress through the semiconductor surface treatment without degrading the excellent electrical characteristics of oxide thin-film transistors (TFTs). The high-energy oxygen radicals produced by the APP without a vacuum system affect the electrical properties by quickly and easily changing the chemical state of the oxygen-related bonds in the semiconductor. Consequently, the amorphous indium gallium zinc oxide TFTs with suitable APP treatment showed excellent bias stress stability and electrical characteristics in comparison with the APP-untreated oxide TFTs. The threshold voltage shift after the negative gate bias stress and positive gate bias stress duration of 1 h significantly reduced from -9.9 to -0.7 V and from +6.7 to +0.5 V, respectively. In addition, the average field-effect mobility remarkably enhanced from 10.8 to 14.8 cm 2 /Vs and the hysteresis behavior reduced from 0.31 to 0.12 V while maintaining the key parameters of TFTs such as subthreshold swing, ON/OFF ratio, and {V}_{ \mathrm{\scriptscriptstyle ON}} . |
---|---|
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2020.3000736 |