Investigation of Light-Stimulated α-IGZO Based Photoelectric Transistors for Neuromorphic Applications

In this article, the steady and transient characteristics of the light-stimulated synaptic transistor based on amorphous indium-gallium-zinc oxide thin film are investigated. An optoelectronic trap charge model with steady and transient methods is employed to simulate the properties of such a neuromorphic device. The device simulation results agree well with the experimental data detected from the fabricated transistors. These numerical simulations can efficiently mimic the synaptic behaviors, such as excitatory postsynaptic current, paired-pulse facilitation, and even high-pass filtering characteristic as well. Furthermore, these results provide a prospective physical understanding of the photosensitive synaptic device for neuromorphic systems and brain-like chips.