Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements

For the investigation of the influence of (PVP: Zn-TeO 2 ) interphase layer on the electrophysical parameters, Al/p-Si structures with/without (PVP: Zn-TeO 2 ) interlayer grown by spin-coating technique and then these factors were studied by I – V and Z – f measurements. First, the Field Emission Sc...

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