Electrical and dielectric properties of Al/(PVP: Zn-TeO2)/p-Si heterojunction structures using current–voltage (I–V) and impedance-frequency (Z–f) measurements

For the investigation of the influence of (PVP: Zn-TeO 2 ) interphase layer on the electrophysical parameters, Al/p-Si structures with/without (PVP: Zn-TeO 2 ) interlayer grown by spin-coating technique and then these factors were studied by I – V and Z – f measurements. First, the Field Emission Scanning Electron Microscopy (FE-SEM), X-ray Diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS), and UV–Vis analyses techniques were performed to investigate the morphology, purity determination, and the optical properties of the nanostructures, respectively. Second, I – V measurements and Z – f were performed at ± 3 and 1.5 V (at 100 Hz–1 MHz), respectively. The values of ideality factor ( n ), barrier height (BH:Φ B ), and series resistance ( R s ) of them were obtained using various methods such as thermionic emission, Cheung’s and Norde functions and compared. The energy dependence of surface states ( N ss ) were extracted from the forward bias I – V measurements by assuming the voltage dependence of BH and n . The frequency-dependence profiles of dielectric constant ( ε ′)/loss ( ε ″), and ac electrical conductivity (σ ac ) were extracted from the Z – f measurements. Experimental results show that (PVP: Zn-TeO 2 ) interlayer leads to an increase in the ε ′, ε ″, BH, R sh , and decrease in N ss . Therefore, Al/(PVP: Zn-TeO 2 )/p-Si structures can be used as an electronic part in nanoscale instead of MS structures.