PEG Modified CsPbIBr2 Perovskite Film for Efficient and Stable Solar Cells

Cesium lead mixed‐halide perovskite (CsPbIBr2), as one of the all‐inorganic perovskites, has attracted great attention owing to its great ambient stability and suitable bandgap. Unfortunately, due to its low film coverage, high density of defects and unfavorable band energy level, the CsPbIBr2 based solar cells suffer from low efficiency. In this work, the Lewis base poly(ethylene glycol) (PEG) is adopted as additive to modify the pure CsPbIBr2. By optimizing the molecular weight and dosage of PEG, the resultant PEG:CsPbIBr2 film possesses suppressed non‐radiative electron–hole recombination, a favorable energy band structure and a weaker sensitive to the moisture. As a result, the device based on the PEG:CsPbIBr2 yields a champion power conversion efficiency (PCE) of 11.10%, with a open‐circuit voltage of 1.21 V, a short‐circuit current of 12.25 mA cm−2, and a fill factor of 74.82%, which is 44.3% higher than its counterpart without PEG. Moreover, the PEG modified device shows excellent long‐term stability, retaining over 90% of the initial efficiency after 600 h storage in ambient condition without encapsulation. In comparison, the device without PEG shows an inferior stability with PCE sharply dropping to 0% within 50 h. The Lewis base poly(ethylene glycol) (PEG) is introduced to assist the crystallization and growth of CsPbIBr2 perovskite, yielding a pinhole‐free perovskite film with reduced defect states and favorable band energy level. Finally, the optimal device achieves a superior power conversion efficiency of 11.10% and great long‐term stability.