Effect of manganese doping on the structural, morphological, optical, electrical, and magnetic properties of BaSnO3

ABO 3 perovskites show unusual property modifications by proper substitution at the A and B sites. Polycrystalline perovskite BaSnO 3 samples doped with different concentrations of manganese (BaSn 1− x Mn x O 3 ) were synthesized by solid-state reaction method. Rietveld refinement of XRD analysis co...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2020-07, Vol.31 (14), p.11159-11176
Hauptverfasser: John, Jibi, Dhananjaya, M., Suresh, S., Savitha Pillai, S., Sahoo, Mamata, Hussain, O. M., Philip, Reji, Mahadevan Pillai, V. P.
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Sprache:eng
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Zusammenfassung:ABO 3 perovskites show unusual property modifications by proper substitution at the A and B sites. Polycrystalline perovskite BaSnO 3 samples doped with different concentrations of manganese (BaSn 1− x Mn x O 3 ) were synthesized by solid-state reaction method. Rietveld refinement of XRD analysis confirmed the structure and phase purity of the synthesized compound. Diamagnetic-to-paramagnetic transition and optical bandgap tuning indicate the substitutional effect of Mn in the host BaSnO 3 lattice. The strong reverse saturable absorption of the synthesized samples makes them ideal candidate for optical limiting applications. The frequency and composition-dependent dielectric studies reveal that Mn-doped BaSn 1− x Mn x O 3 can be used for high-frequency device applications. The cycling retention in the specific capacitance of 96.2% at a current density of 25 mA/g even after 2500 cycles in Mn-doped BaSnO 3 electrode can be used in energy storage devices for supercapacitor applications.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-03665-4