The Low-Dimensional Three-Dimensional Tin Halide Perovskite: Film Characterization and Device Performance
Halide perovskite solar cells (PSCs) are considered as one of the most promising candidates for the next generation solar cells as their power conversion efficiency (PCE) has rapidly increased up to 25.2%. However, the most efficient halide perovskite materials all contain toxic lead. Replacing the...
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Veröffentlicht in: | Energies (Basel) 2020-01, Vol.13 (1), p.2 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Halide perovskite solar cells (PSCs) are considered as one of the most promising candidates for the next generation solar cells as their power conversion efficiency (PCE) has rapidly increased up to 25.2%. However, the most efficient halide perovskite materials all contain toxic lead. Replacing the lead cation with environmentally friendly tin (Sn) is proposed as an important alternative. Today, the inferior performance of Sn-based PSCs mainly due to two challenging issues, namely the facile oxidation of Sn2+ to Sn4+ and the low formation energies of Sn vacancies. Two-dimensional (2D) halide perovskite, in which the large sized organic cations confine the corner sharing BX6 octahedra, exhibits higher formation energy than that of three-dimensional (3D) structure halide perovskite. The approach of mixing a small amount of 2D into 3D Sn-based perovskites was demonstrated as an efficient method to produce high performance perovskite films. In this review, we first provide an overview of key points for making high performance PSCs. Then we give an introduction to the physical parameters of 3D ASnX3 (MA+, FA+, and Cs+) perovskite and a photovoltaic device based on them, followed by an overview of 2D/3D halide perovskites based on ASnX3 (MA+ and FA+) and their optoelectronic applications. The current challenges and a future outlook of Sn-based PSCs are discussed in the end. This review will give readers a better understanding of the 2D/3D Sn-based PSCs. |
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ISSN: | 1996-1073 1996-1073 |
DOI: | 10.3390/en13010002 |