Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers

We examine the influence of quantum dot (QD) morphology on the optical properties of two-dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional nanostructures. Using nanostructure sizes from scanning transmission electron microscopy and local Sb compositions from local-electrode...

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Veröffentlicht in:Applied physics letters 2020-06, Vol.116 (25)
Hauptverfasser: Greenhill, C., Chang, A. S., Zech, E. S., Clark, S., Balakrishnan, G., Goldman, R. S.
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Sprache:eng
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Zusammenfassung:We examine the influence of quantum dot (QD) morphology on the optical properties of two-dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional nanostructures. Using nanostructure sizes from scanning transmission electron microscopy and local Sb compositions from local-electrode atom-probe tomography as input into self-consistent Schrödinger–Poisson simulations based on 8 × 8 k·p theory, we compute confinement energies for QDs, circular arrangements of smaller QDs, termed QD-rings, and 2D layers on GaAs substrates. The computed confinement energies and the measured photoluminescence emission energies increase from QDs to QD-rings to 2D layers, enabling direct association of nanostructure morphologies with the optical properties of the GaSb/GaAs multilayers. This work opens up opportunities for tailoring near to far infrared optoelectronic devices by varying the QD morphology.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0011094