Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers
We examine the influence of quantum dot (QD) morphology on the optical properties of two-dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional nanostructures. Using nanostructure sizes from scanning transmission electron microscopy and local Sb compositions from local-electrode...
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Veröffentlicht in: | Applied physics letters 2020-06, Vol.116 (25) |
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Sprache: | eng |
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Zusammenfassung: | We examine the influence of quantum dot (QD) morphology on the optical properties of two-dimensional (2D) GaSb/GaAs multilayers, with and without three-dimensional nanostructures. Using nanostructure sizes from scanning transmission electron microscopy and local Sb compositions from local-electrode atom-probe tomography as input into self-consistent Schrödinger–Poisson simulations based on 8 × 8 k·p theory, we compute confinement energies for QDs, circular arrangements of smaller QDs, termed QD-rings, and 2D layers on GaAs substrates. The computed confinement energies and the measured photoluminescence emission energies increase from QDs to QD-rings to 2D layers, enabling direct association of nanostructure morphologies with the optical properties of the GaSb/GaAs multilayers. This work opens up opportunities for tailoring near to far infrared optoelectronic devices by varying the QD morphology. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0011094 |