Synthesis of SiC Nanowires via Controllable Anodic Etching Time

Porous SiC (PSC) was successfully synthesized via UV-assisted pulsed current anodic etching of hexagonal n-type silicon carbide (6H–SiC) substrate using different etching times. The micromorphological and structural characterizations of PSC were reported. Field-emission scanning electron microscopy (FESEM) results established that the etching time can be considered as a significant etching parameter that controls the micromorphology aspects of the porous SiC specimens. Furthermore, the adjustment of etching time can convert SiC pores into nanowire structures. Raman spectroscopy characterization was performed as well, where the shape of the Raman spectra was analyzed, in precise the transverse optical E 1 (TO) and the longitudinal optical A 1 (LO) peaks, which correlate powerfully with the porous SiC micromorphology. This simplistic synthesis may be considered as a potential and affordable technique to synthesize SiC nanowires for extensive applications.