Hybrid structure responsible for improved thermoelectric performance of Sn-incorporated Cu3SbSe4 with a second phase CuSe

In this work, we design and synthesize a hybrid structure consisting of Sn-incorporated Cu3SbSe4 and a second phase CuSe, that is, (Cu3Sb1 − xSnxSe4)(CuSe)y (x = 0–0.04, y = 0.3–0.08), and explore the role of each phase on the improvement of the thermoelectric (TE) performance. In the Cu3Sb1 − xSnxS...

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Veröffentlicht in:Journal of applied physics 2020-06, Vol.127 (23)
Hauptverfasser: Min, Lei, Xia, Yafen, Ying, Pengzhan, Cui, Jiaolin
Format: Artikel
Sprache:eng
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Zusammenfassung:In this work, we design and synthesize a hybrid structure consisting of Sn-incorporated Cu3SbSe4 and a second phase CuSe, that is, (Cu3Sb1 − xSnxSe4)(CuSe)y (x = 0–0.04, y = 0.3–0.08), and explore the role of each phase on the improvement of the thermoelectric (TE) performance. In the Cu3Sb1 − xSnxSe4 phase, the element Sn residing at the Sb site provides p-type holes while at the same time increasing the point defects and crystal structure distortion. The presence of the second phase CuSe, which is in situ formed within the Cu3Sb1 − xSnxSe4 matrix, not only improves the electrical conductivity but also increases the phonon scattering on the phase boundaries. As a result, the hybrid structure allows the improvement in TE performance with the highest ZT value of 0.37 at ∼600 K for the samples at x = 0.02–0.03 and y = 0.11–0.09, which is about 42% higher than that of pristine Cu3SbSe4. This work reveals us a new method of improving TE performance, that is, through organizing a hybrid structure in Cu3SbSe4-based composites.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0011146