On the Distance Directional Growth of GaxOy Nanomaterials Concerning the Surface Au Droplets and Au/Ga/O Clusters Outward Diffusion on the Separated Au Islands/Strips on Gaas Substrate Using Thermal Vapor-Liquid-Solid Method

This paper outlines some experimental results and discusses the new growth method for growing the different GaxOy nanomaterials formed during the outward diffusion of the surface nanoclusters (SNCs) including the Au droplets and/or surface Au/Ga/O nanoclusters from the Au separated islands/strips being on GaAs substrate during the thermal Vapor -Liquid -Solid method with two steps temperature mode. Depending on the technological conditions, during the outward diffusion of the SNCs from the Au catalyst island/strip, the different sizes, morphologies and features of nanomaterials will be formed along the surface diffusion direction with the decreasing sizes. This growth method to be so called the distance directional growth method, it has not reported in the Literature. The nanomaterial growth process here could be explained by the solid - solid phase with the self-growth mechanism from the moving-diffusing SNCs with the features formed already before based on their chemical- physical interactions between the Au catalyst island/strip and GaAs substrate. In the suitable technological conditions the surface nanoscale Kirkendall effect with Kirkendall voids also completely formed... Based on the results of Field Emission Scanning electron Microscope (FESEM), the Energy-Dispersive X-ray diffraction (EDX) measurements, the formation mechanism and effect of the SNCs outward diffusion on the growth of different GaxOy nanomaterials have discussed more in detailed.. The diffusivities of the SNCs depending on technological conditions in the different samples have estimated by the random walk theory, their values are in the range of 8.35x10-10 to 10-11 m2/sec. The distance directional growth method could be applied for the growing and controlling the nanomaterials configurations outside the Au catalyst island/strip on GaAs substrate with the different sizes for nano devices application.