Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy

AlN/c-sapphire templates grown by plasma-activated molecular beam epitaxy have been studied using multicrystal X-ray diffractometry and a multi-beam optical stress meter system. Studies of the seed and buffer layers grown at different ratios of Al and N* growth flows and substrate temperatures have...

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Veröffentlicht in:Technical physics letters 2020-04, Vol.46 (4), p.389-392
Hauptverfasser: Ratnikov, V. V., Nechaev, D. V., Myasoedov, A. V., Koshelev, O. A., Zhmerik, V. N.
Format: Artikel
Sprache:eng
Schlagworte:
Buffer layers
Classical and Continuum Physics
Dislocation density
Epitaxial growth
Molecular beam epitaxy
Physics
Physics and Astronomy
Sapphire
Substrates
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Zusammenfassung:AlN/c-sapphire templates grown by plasma-activated molecular beam epitaxy have been studied using multicrystal X-ray diffractometry and a multi-beam optical stress meter system. Studies of the seed and buffer layers grown at different ratios of Al and N* growth flows and substrate temperatures have shown that templates with small tensile elastic stresses (
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785020040240