A third-order nonlinear optical single crystal of 3,4-dimethoxy-substituted chalcone derivative with high laser damage threshold value: a potential material for optical power limiting
Third-order nonlinear optical material 4-[(1 E )-3-(3,4-dimethoxyphenyl)-3-oxoprop-1-en-1-yl]phenyl 4-methylbenzene-1-sulfonate (DMPMS) is crystallized by slow solvent evaporation technique. The crystal has inversion symmetry and belongs to monoclinic system with P 2 1 / c space group. The C–H⋯O/C–H...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-06, Vol.31 (12), p.9133-9150 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Third-order nonlinear optical material 4-[(1
E
)-3-(3,4-dimethoxyphenyl)-3-oxoprop-1-en-1-yl]phenyl 4-methylbenzene-1-sulfonate (DMPMS) is crystallized by slow solvent evaporation technique. The crystal has inversion symmetry and belongs to monoclinic system with
P
2
1
/
c
space group. The C–H⋯O/C–H⋯π intermolecular interactions will be large complementarity for molecular density/crystal packing. A comprehensive investigation for absorbance and emission properties has been performed. Thermal stability is up to 258 °C without any weight loss and calculated value of laser damage threshold is ≈ 12 GW/cm
2
. The DMPMS shows low dielectric constant value, about 4.42 at 1 MHz and electronic polarizability values in the order of
10
-
23
cm
3
. Furthermore, theoretical calculation has been performed using B3LYP and M06-2X functional. The static first-order hyperpolarizability parameter is 55 (B3LYP) and 34 (M06-2X) times that of urea. The total contribution of second-order hyperpolarizability is − 37.9
×
10
-
40
esu
(in B3LYP functional) and − 25.77
×
10
-
40
esu
(in M06-2X functional), respectively. Here, two-photon absorption mechanism is responsible for nonlinear absorption and co-efficient is found to be
28.3
×
10
-
12
m/W. In optical limiting study, limiting threshold is found to be 65 µJ. The real and imaginary third-order nonlinear optical susceptibility is of the order
10
-
12
esu
. |
---|---|
ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-020-03443-2 |