Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation
High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37
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| Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2020-06, Vol.14 (6), p.n/a |
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| container_title | Physica status solidi. PSS-RRL. Rapid research letters |
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| creator | Liu, Yingmei Chu, Yuanyuan Lu, Yue Li, Ying Li, Shengjuan Jin, Chuan Chen, Jianxin Wang, Xingjun |
| description | High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37 |
| doi_str_mv | 10.1002/pssr.202000108 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2408525272</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2408525272</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3178-e329fbff7083547349e467db1f10f579aaf1b58204a7d27f166b8b399a3142f13</originalsourceid><addsrcrecordid>eNqFkE9LwzAYh4soOKdXzwHP3fKvTXucc26DwYab55C2CctYk5pkjHnyI_gZ_SS2TPTo6X15eX6_F54oukdwgCDEw8Z7N8AQQwgRzC6iHspSHKeYwcvfPaHX0Y33OwiTnFHSi-xChKBL-fXxuWyCrvW7rMBUjPy6GM7NCsxkkM7uDqYM2hqwsUfhKvBowxZMlNKlliaAsXBOSwfG1ihtZN3dhKnAZitdLfbgSXuvG9E13EZXSuy9vPuZ_ej1ebIZz-LFcjofjxZxSRDLYklwrgqlGMxIQhmhuaQpqwqkEFQJy4VQqEgyDKlgFWYKpWmRFSTPBUEUK0T60cO5t3H27SB94Dt7cKZ9yTGFWYITzHBLDc5U6WxrTyreOF0Ld-II8k4q76TyX6ltID8HjnovT__QfLVev_xlvwF-rn0L</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2408525272</pqid></control><display><type>article</type><title>Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation</title><source>Wiley Online Library - AutoHoldings Journals</source><creator>Liu, Yingmei ; Chu, Yuanyuan ; Lu, Yue ; Li, Ying ; Li, Shengjuan ; Jin, Chuan ; Chen, Jianxin ; Wang, Xingjun</creator><creatorcontrib>Liu, Yingmei ; Chu, Yuanyuan ; Lu, Yue ; Li, Ying ; Li, Shengjuan ; Jin, Chuan ; Chen, Jianxin ; Wang, Xingjun</creatorcontrib><description>High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37 < x < 0.57) epilayers are grown on InP by molecular beam epitaxy. The localized states are confirmed by the S‐shape behavior of the temperature‐dependent photoluminescence (PL). With the help of a model based on a redistribution process of localized excitons, the degree of carrier localization is estimated quantitatively. It is found that the degree of carrier localization reaches a maximum for the lattice‐matched sample with Sb = 47.7%, indicating that carrier localization effects are mainly due to compositional fluctuations. This result is corroborated by the power‐dependent PL. In addition, power‐dependent Raman measurements give a hint that the thermal conductivity of the lattice‐matched sample is ≈50% higher than that of lattice‐mismatched samples with Sb = 37.9% and 56.2%. Thus the abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent PL from the lattice‐mismatched GaAsSb samples is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity.
The abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent photoluminescence from lattice‐mismatched GaAsSb/InP heterojunctions is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity. On the contrary, lattice‐matched GaAsSb/InP heterojunctions provide a higher degree of carrier localization, together with the superior thermal properties.</description><identifier>ISSN: 1862-6254</identifier><identifier>EISSN: 1862-6270</identifier><identifier>DOI: 10.1002/pssr.202000108</identifier><language>eng</language><publisher>Weinheim: Wiley Subscription Services, Inc</publisher><subject>Epitaxial growth ; Excitons ; GaAsSb/InP heterojunctions ; Heat conductivity ; Heat transfer ; Heterojunctions ; High temperature effects ; Laser beam heating ; Lattice matching ; localization ; Molecular beam epitaxy ; Photoluminescence ; Red shift ; Temperature dependence ; Thermal conductivity</subject><ispartof>Physica status solidi. PSS-RRL. Rapid research letters, 2020-06, Vol.14 (6), p.n/a</ispartof><rights>2020 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3178-e329fbff7083547349e467db1f10f579aaf1b58204a7d27f166b8b399a3142f13</citedby><cites>FETCH-LOGICAL-c3178-e329fbff7083547349e467db1f10f579aaf1b58204a7d27f166b8b399a3142f13</cites><orcidid>0000-0002-4833-4339</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssr.202000108$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssr.202000108$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Liu, Yingmei</creatorcontrib><creatorcontrib>Chu, Yuanyuan</creatorcontrib><creatorcontrib>Lu, Yue</creatorcontrib><creatorcontrib>Li, Ying</creatorcontrib><creatorcontrib>Li, Shengjuan</creatorcontrib><creatorcontrib>Jin, Chuan</creatorcontrib><creatorcontrib>Chen, Jianxin</creatorcontrib><creatorcontrib>Wang, Xingjun</creatorcontrib><title>Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation</title><title>Physica status solidi. PSS-RRL. Rapid research letters</title><description>High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37 < x < 0.57) epilayers are grown on InP by molecular beam epitaxy. The localized states are confirmed by the S‐shape behavior of the temperature‐dependent photoluminescence (PL). With the help of a model based on a redistribution process of localized excitons, the degree of carrier localization is estimated quantitatively. It is found that the degree of carrier localization reaches a maximum for the lattice‐matched sample with Sb = 47.7%, indicating that carrier localization effects are mainly due to compositional fluctuations. This result is corroborated by the power‐dependent PL. In addition, power‐dependent Raman measurements give a hint that the thermal conductivity of the lattice‐matched sample is ≈50% higher than that of lattice‐mismatched samples with Sb = 37.9% and 56.2%. Thus the abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent PL from the lattice‐mismatched GaAsSb samples is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity.
The abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent photoluminescence from lattice‐mismatched GaAsSb/InP heterojunctions is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity. On the contrary, lattice‐matched GaAsSb/InP heterojunctions provide a higher degree of carrier localization, together with the superior thermal properties.</description><subject>Epitaxial growth</subject><subject>Excitons</subject><subject>GaAsSb/InP heterojunctions</subject><subject>Heat conductivity</subject><subject>Heat transfer</subject><subject>Heterojunctions</subject><subject>High temperature effects</subject><subject>Laser beam heating</subject><subject>Lattice matching</subject><subject>localization</subject><subject>Molecular beam epitaxy</subject><subject>Photoluminescence</subject><subject>Red shift</subject><subject>Temperature dependence</subject><subject>Thermal conductivity</subject><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LwzAYh4soOKdXzwHP3fKvTXucc26DwYab55C2CctYk5pkjHnyI_gZ_SS2TPTo6X15eX6_F54oukdwgCDEw8Z7N8AQQwgRzC6iHspSHKeYwcvfPaHX0Y33OwiTnFHSi-xChKBL-fXxuWyCrvW7rMBUjPy6GM7NCsxkkM7uDqYM2hqwsUfhKvBowxZMlNKlliaAsXBOSwfG1ihtZN3dhKnAZitdLfbgSXuvG9E13EZXSuy9vPuZ_ej1ebIZz-LFcjofjxZxSRDLYklwrgqlGMxIQhmhuaQpqwqkEFQJy4VQqEgyDKlgFWYKpWmRFSTPBUEUK0T60cO5t3H27SB94Dt7cKZ9yTGFWYITzHBLDc5U6WxrTyreOF0Ld-II8k4q76TyX6ltID8HjnovT__QfLVev_xlvwF-rn0L</recordid><startdate>202006</startdate><enddate>202006</enddate><creator>Liu, Yingmei</creator><creator>Chu, Yuanyuan</creator><creator>Lu, Yue</creator><creator>Li, Ying</creator><creator>Li, Shengjuan</creator><creator>Jin, Chuan</creator><creator>Chen, Jianxin</creator><creator>Wang, Xingjun</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-4833-4339</orcidid></search><sort><creationdate>202006</creationdate><title>Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation</title><author>Liu, Yingmei ; Chu, Yuanyuan ; Lu, Yue ; Li, Ying ; Li, Shengjuan ; Jin, Chuan ; Chen, Jianxin ; Wang, Xingjun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3178-e329fbff7083547349e467db1f10f579aaf1b58204a7d27f166b8b399a3142f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Epitaxial growth</topic><topic>Excitons</topic><topic>GaAsSb/InP heterojunctions</topic><topic>Heat conductivity</topic><topic>Heat transfer</topic><topic>Heterojunctions</topic><topic>High temperature effects</topic><topic>Laser beam heating</topic><topic>Lattice matching</topic><topic>localization</topic><topic>Molecular beam epitaxy</topic><topic>Photoluminescence</topic><topic>Red shift</topic><topic>Temperature dependence</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Yingmei</creatorcontrib><creatorcontrib>Chu, Yuanyuan</creatorcontrib><creatorcontrib>Lu, Yue</creatorcontrib><creatorcontrib>Li, Ying</creatorcontrib><creatorcontrib>Li, Shengjuan</creatorcontrib><creatorcontrib>Jin, Chuan</creatorcontrib><creatorcontrib>Chen, Jianxin</creatorcontrib><creatorcontrib>Wang, Xingjun</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Yingmei</au><au>Chu, Yuanyuan</au><au>Lu, Yue</au><au>Li, Ying</au><au>Li, Shengjuan</au><au>Jin, Chuan</au><au>Chen, Jianxin</au><au>Wang, Xingjun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation</atitle><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle><date>2020-06</date><risdate>2020</risdate><volume>14</volume><issue>6</issue><epage>n/a</epage><issn>1862-6254</issn><eissn>1862-6270</eissn><abstract>High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37 < x < 0.57) epilayers are grown on InP by molecular beam epitaxy. The localized states are confirmed by the S‐shape behavior of the temperature‐dependent photoluminescence (PL). With the help of a model based on a redistribution process of localized excitons, the degree of carrier localization is estimated quantitatively. It is found that the degree of carrier localization reaches a maximum for the lattice‐matched sample with Sb = 47.7%, indicating that carrier localization effects are mainly due to compositional fluctuations. This result is corroborated by the power‐dependent PL. In addition, power‐dependent Raman measurements give a hint that the thermal conductivity of the lattice‐matched sample is ≈50% higher than that of lattice‐mismatched samples with Sb = 37.9% and 56.2%. Thus the abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent PL from the lattice‐mismatched GaAsSb samples is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity.
The abnormal S‐shape behavior (blue–redshift) that occurs in the power‐dependent photoluminescence from lattice‐mismatched GaAsSb/InP heterojunctions is attributed to both the lower degree of carrier localization and the enhanced laser heating effect caused by their smaller thermal conductivity. On the contrary, lattice‐matched GaAsSb/InP heterojunctions provide a higher degree of carrier localization, together with the superior thermal properties.</abstract><cop>Weinheim</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/pssr.202000108</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-4833-4339</orcidid></addata></record> |
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| subjects | Epitaxial growth Excitons GaAsSb/InP heterojunctions Heat conductivity Heat transfer Heterojunctions High temperature effects Laser beam heating Lattice matching localization Molecular beam epitaxy Photoluminescence Red shift Temperature dependence Thermal conductivity |
| title | Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation |
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