Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation

Lattice‐Optimized GaAsSb/InP Heterojunction Toward Both Efficient Carrier Confinement and Thermal Dissipation

High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37 

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Veröffentlicht in:Physica status solidi. PSS-RRL. Rapid research letters 2020-06, Vol.14 (6), p.n/a
Hauptverfasser: Liu, Yingmei, Chu, Yuanyuan, Lu, Yue, Li, Ying, Li, Shengjuan, Jin, Chuan, Chen, Jianxin, Wang, Xingjun
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
Excitons
GaAsSb/InP heterojunctions
Heat conductivity
Heat transfer
Heterojunctions
High temperature effects
Laser beam heating
Lattice matching
localization
Molecular beam epitaxy
Photoluminescence
Red shift
Temperature dependence
Thermal conductivity
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Beschreibung
Zusammenfassung:High‐quality lattice‐matched and mismatched GaAs1–xSbx (0.37 
ISSN:1862-6254
1862-6270
DOI:10.1002/pssr.202000108