Effects of Redundant Electrode Width on Stability of a-InGaZnO Thin-Film Transistors Under Hot-Carrier Stress

In this article, the effects of redundant electrode width on stability of inverted staggered via-contact structured amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) under hot-carrier stress (HCS) were investigated. It is found that devices with a larger redundant electrode width have a severer degradation behavior after HCS. Capacitance-voltage measurements were conducted to study the degradation mechanism and technology computer-aided design (TCAD) simulation was employed to understand the different degradation behaviors.