2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

In this work, we use a two-terminal 2D MoS 2 -based memristive device to emulate an artificial neuron. The Au/MoS 2 /Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 10 6 , originating from an Ag diffusion-based filamentary proc...

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Veröffentlicht in:IEEE electron device letters 2020-06, Vol.41 (6), p.936-939
Hauptverfasser: Dev, Durjoy, Krishnaprasad, Adithi, Shawkat, Mashiyat S., He, Zhezhi, Das, Sonali, Fan, Deliang, Chung, Hee-Suk, Jung, Yeonwoong, Roy, Tania
Format: Artikel
Sprache:eng
Schlagworte:
2D material
Electrodes
Engineering
Engineering, Electrical & Electronic
Gold
LIF neuron
Memory devices
Memristors
Molybdenum
Molybdenum disulfide
MoS
Neurons
Science & Technology
Silver
SNN
Sulfur
Switches
Switching
Technology
Threshold voltage
TSM
Two dimensional displays
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Zusammenfassung:In this work, we use a two-terminal 2D MoS 2 -based memristive device to emulate an artificial neuron. The Au/MoS 2 /Ag device exhibits volatile resistance switching characteristics with a low threshold voltage and a high ON-OFF ratio of 10 6 , originating from an Ag diffusion-based filamentary process. The leaky integrate-and-fire neuron implemented with this device successfully emulates the key characteristics of a biological neuron.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2020.2988247