Antiambipolar Transistor: A Newcomer for Future Flexible Electronics

An antiambipolar transistor exhibits a steep increase and decrease in drain current within a certain range of gate bias voltage. This unique feature is brought about by a partially stacked pn‐heterointerface formed around the center of the transistor channel. First, this review discusses recent topics related to the antiambipolar transistor, including the constituent materials, operation mechanism, and factors controlling device performance. Then, novel functional applications, such as optoelectronics and multivalued logic circuits, are introduced. The transistor channels of antiambipolar transistors consist largely of 2D atomically thin films or organic semiconductors. These materials are mechanically flexible. Therefore, antiambipolar transistors have the potential to enable advances to be made in the field of flexible electronics. Antiambipolar transistors show a distinguishing electrical property: a steep increase and decrease in drain current with increasing gate bias voltage. This unique feature makes possible novel functional applications, such as optoelectronics, tunneling devices, and multivalued logic circuits. Furthermore, the transistor channels consist of 2D thin films or organic semiconductors and, therefore, antiambipolar transistors have the potential for future flexible electronics.