Bi-Polar Synaptic Behavior of Pt/SiOx:Ag/TiOx/p++- Si Memristor

Recently, by inserting a TiOx thin layer, we have fabricated a memristive device as Pt/SiOx:Ag/TiOx/p++-Si which features a better bi-polar gradually resistive switching under positive and negative electrical bias. Different synaptic functions including potentiation, depression, short-term potentiation and the transition from short-term memory (STM) to long-term memory (LTM) using suitably programmed voltage pulse have been implemented successfully in the memristive device. It is indicated that the Pt/SiOx:Ag/TiOx/p++-Si memristor can be used as a promising emulator for biological synapse, which could have great potential for brain-inspired neuromorphic computing.