High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs

A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS) thin‐film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active‐m...

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Veröffentlicht in:Journal of the Society for Information Display 2020-04, Vol.28 (4), p.350-359
Hauptverfasser: Yonebayashi, Ryo, Tanaka, Kohei, Okada, Kuniaki, Yamamoto, Kaoru, Yamamoto, Keiichi, Uchida, Seiichi, Aoki, Tomohisa, Takeda, Yujiro, Furukawa, Hiroaki, Ito, Kazuatsu, Katoh, Hiromi, Nakamura, Wataru
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Sprache:eng
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Zusammenfassung:A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS) thin‐film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active‐matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved. A pixel circuit and a gate driver on array for light‐emitting display are presented. By simultaneously utilizing top‐gate n‐type oxide and p‐type LTPS TFTs, the circuits provide high refresh rate and low power consumption. An AMOLED panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.
ISSN:1071-0922
1938-3657
DOI:10.1002/jsid.888