Hydride Vapor-Phase Epitaxy of a Semipolar AlN(102) Layer on a Nanostructured Si(100) Substrate

We propose a method for the synthesis of hexagonal AlN layer on Si(100) substrate with a V-groove nanostructured surface where the angle between the sloped nanoridge surface and Si(100) plane amounts to 47°. It is established that metalorganic hydride vapor-phase epitaxy (HVPE) on this substrate leads to the formation of semipolar AlN(10 2) layers having an X-ray rocking curve with a minimum FWHM value of ω θ ~ 60 arcmin. Raman spectra of this epilayer display additional peaks related to A 1 (TO) and E 1 (TO) phonons in contrast to the spectrum of a polar AlN(0001) layer containing an additional A 1 (LO) peak.