Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO3 antiferroelectric ceramics

Recently, AgNbO 3 antiferroelectric ceramics have attracted great attention by virtue of their characters of high energy storage density and environmental friendliness. To further optimize the electrical properties, in this work, Lu 2 O 3 modified AgNbO 3 ceramics were prepared via conventional soli...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2020-05, Vol.31 (10), p.7731-7741
Hauptverfasser: Mao, Shuaifei, Luo, Nengneng, Han, Kai, Feng, Qin, Chen, Xiyong, Peng, Biaolin, Liu, Laijun, Hu, Changzheng, Zhou, Huanfu, Toyohisa, Fujita, Wei, Yuezhou
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Sprache:eng
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Zusammenfassung:Recently, AgNbO 3 antiferroelectric ceramics have attracted great attention by virtue of their characters of high energy storage density and environmental friendliness. To further optimize the electrical properties, in this work, Lu 2 O 3 modified AgNbO 3 ceramics were prepared via conventional solid state method. Crystal structure and element analysis indicated the Lu 3+ ion preferred to enter the A-site when Lu 2 O 3 content was lower than 2 mol%, otherwise, it was more likely to form LuNbO 4 or Lu 3 NbO 7 -based solid solutions. Remarkably improved stability of antiferroelectric phase was observed once Lu 3+ ions enter into the A-site, on account of the decrease of cell volume and tolerance factor. As a consequence, an enhanced recoverable energy storage density ( W rec ) of 3.5 J/cm 3 was achieved in 1 mol% Lu 2 O 3 modified AgNbO 3 ceramics at 210 kV/cm, which is superior to the other lead-free ceramics under moderate electric field (
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-03309-7