Role of WO3 nanoparticles in electrical and dielectric properties of BaTiO3–SrTiO3 ceramics
(BaTiO 3 –SrTiO 3 )/(WO 3 ) x ceramics with x = 0 up to 5% were synthesized using solid-state reaction via high-energy ballf milling technique. Various characterization techniques were used including X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform-infrared spec...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-05, Vol.31 (10), p.7786-7797 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | (BaTiO
3
–SrTiO
3
)/(WO
3
)
x
ceramics with
x
= 0 up to 5% were synthesized using solid-state reaction via high-energy ballf milling technique. Various characterization techniques were used including X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform-infrared spectroscopy (FT-IR), and UV–visible diffuse reflectance (DR) spectrophotometer. Structural analysis via XRD indicates the formation of two separate phases of SrTiO
3
(STO) and BaTiO
3
(BTO) having both cubic structures. The presence of BaWO
4
as impurity was detected for higher concentration. SEM observations show a reduction in the average grains size with increasing WO
3
addition. In comparison with free-added ceramic, the optical band gap energy (
E
g
) shows a slight increase with WO
3
addition. Contextual investigations on the electrical and dielectric properties of various WO
3
added to BTO–STO ceramics have been used to evaluate conductivity (
σ
), dielectric constant and loss (
ε
r
′
and
ε
r
″
), and dissipation factor (
t
a
n
δ
) against both frequency and dc bias voltages. Generally, both
σ
and
ε
r
″
correspond to the tendency of the power law to frequency. However, dc bias has been noticed to be lesser affecting the conduction mechanisms, which has a small variation for various WO
3
addition ratios. In addition, the dissipation factor was found to be highly dependent on both the addition ratio and the frequency as well as dc bias applied. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-020-03317-7 |