Role of WO3 nanoparticles in electrical and dielectric properties of BaTiO3–SrTiO3 ceramics

(BaTiO 3 –SrTiO 3 )/(WO 3 ) x ceramics with x  = 0 up to 5% were synthesized using solid-state reaction via high-energy ballf milling technique. Various characterization techniques were used including X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform-infrared spec...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2020-05, Vol.31 (10), p.7786-7797
Hauptverfasser: Slimani, Y., Unal, B., Almessiere, M. A., Hannachi, E., Yasin, Ghulam, Baykal, A., Ercan, I.
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Sprache:eng
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Zusammenfassung:(BaTiO 3 –SrTiO 3 )/(WO 3 ) x ceramics with x  = 0 up to 5% were synthesized using solid-state reaction via high-energy ballf milling technique. Various characterization techniques were used including X-ray powder diffraction (XRD), scanning electron microscope (SEM), Fourier transform-infrared spectroscopy (FT-IR), and UV–visible diffuse reflectance (DR) spectrophotometer. Structural analysis via XRD indicates the formation of two separate phases of SrTiO 3 (STO) and BaTiO 3 (BTO) having both cubic structures. The presence of BaWO 4 as impurity was detected for higher concentration. SEM observations show a reduction in the average grains size with increasing WO 3 addition. In comparison with free-added ceramic, the optical band gap energy ( E g ) shows a slight increase with WO 3 addition. Contextual investigations on the electrical and dielectric properties of various WO 3 added to BTO–STO ceramics have been used to evaluate conductivity ( σ ), dielectric constant and loss ( ε r ′ and ε r ″ ), and dissipation factor ( t a n δ ) against both frequency and dc bias voltages. Generally, both σ and ε r ″ correspond to the tendency of the power law to frequency. However, dc bias has been noticed to be lesser affecting the conduction mechanisms, which has a small variation for various WO 3 addition ratios. In addition, the dissipation factor was found to be highly dependent on both the addition ratio and the frequency as well as dc bias applied.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-020-03317-7