Power Characteristics of GaN Microwave Transistors on Silicon Substrates

GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maxi...

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Veröffentlicht in:	Technical physics letters 2020-03, Vol.46 (3), p.211-214
Hauptverfasser:	Chernykh, I. A., Romanovskiy, S. M., Andreev, A. A., Ezubchenko, I. S., Chernykh, M. Y., Grishchenko, J. V., Mayboroda, I. O., Korneev, S. V., Krymko, M. M., Zanaveskin, M. L., Sinkevich, V. F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Classical and Continuum Physics Gallium nitrides Heterostructures Metalorganic chemical vapor deposition Physics Physics and Astronomy Semiconductor devices Silicon Silicon substrates Transistors
Online-Zugang:	Volltext
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Zusammenfassung:	GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.
ISSN:	1063-7850 1090-6533
DOI:	10.1134/S1063785020030050