An InGaN/SiNx/Si Uniband Diode

We introduce a diode that operates differently from p – n junction or Schottky diodes. It is based on a p -Si/ n -In 0.4 Ga 0.6 N heterojunction with a SiN x interlayer. With around 40% In content, the valence and conduction bands of Si and InGaN are aligned. The behavior of the p -Si/ n -InGaN interface is ohmic due to electron–hole recombination and generation at forward and reverse bias. Upon insertion of a sufficiently thick SiN x interlayer, the forward current is governed by tunneling. The reverse current is blocked because electron–hole generation is no longer possible together at the interface. A pronounced, weakly temperature-dependent rectifying behavior results.